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Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Identifieur interne : 00C548 ( Main/Repository ); précédent : 00C547; suivant : 00C549

Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Auteurs : RBID : Pascal:03-0139392

Descripteurs français

Pascal (Inist)
- 6855J, 6837E, 6146, 6835B, 8115H, 6847F, 8107B, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Epitaxie jet moléculaire, Couche épitaxique semiconductrice, Croissance semiconducteur, STM, Nanomatériau, Structure îlot, Autoassemblage.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Island structure, Molecular beam epitaxy, Nanostructured materials, STM, Self-assembly, Semiconductor epitaxial layers, Semiconductor growth.

Abstract

The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The top ridge of the islands is atomically resolved to be the most recently discovered high-index surface {11,5,2}. This observation points to the importance of the study of nanostructure growth on high-index surfaces and their characterization. © 2003 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Wang, Z M" uniqKey="Wang Z">Z. M. Wang</name>
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<author><name sortKey="Wen, H" uniqKey="Wen H">H. Wen</name>
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<author><name sortKey="Yazdanpanah, V R" uniqKey="Yazdanpanah V">V. R. Yazdanpanah</name>
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<author><name sortKey="Shultz, J L" uniqKey="Shultz J">J. L. Shultz</name>
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<author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name>
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<front><div type="abstract" xml:lang="en">The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The top ridge of the islands is atomically resolved to be the most recently discovered high-index surface {11,5,2}. This observation points to the importance of the study of nanostructure growth on high-index surfaces and their characterization. © 2003 American Institute of Physics.</div>
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Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Descripteurs français

English descriptors

Abstract

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